n-channel enhancement mode vertical dmos fet issue 2 C march 94 features * 60 volt v ds *r dson) =5 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 270 ma pulsed drain current i dm 3a gate-source voltage v gs 20 v power dissipation at t amb =25c p tot 625 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.8 2.4 v id=1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 0.5 50 m a m a v ds =60v, v gs =0 v ds =48v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 750 ma v ds =18v, v gs =10v static drain-source on-state resistance (1) r ds(on) 5 w v gs =10v,i d =500ma forward transconductance(1)(2 ) g fs 150 ms v ds =18v,i d =500ma input capacitance (2) c iss 35 pf common source output capacitance (2) c oss 25 pf v ds =18v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 8pf turn-on delay time (2)(3) t d(on) 5ns v dd ? 18v, i d =500ma rise time (2)(3) t r 7ns turn-off delay time (2)(3) t d(off) 6ns fall time (2)(3) t f 8ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% ( 2) sample test. e-line to92 compatible ZVN3306A 3-375 d g s typical characteristics v ds - drain source voltage (volts) i d(o n ) -on-state drain current (amps) transfer characteristics saturation characteristics v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) i d= 1a 0.5a 0.25a i d( o n ) - on- stat e drain cur r e n t ( am ps) v gs -gate source voltage (volts) 0.6 0 0.2 0.4 0.8 02 4 6 8 10 1.0 v gs= 10v 5v 7v 8v 6v 4v 3v 9v normalised r ds(on) and v gs(th) vs temperature nor m ali s e d r ds(on) a nd v g s(th) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 dr ain -s o u rc e r e s i s tanc e r d s( o n ) g ate t h res h o l d v o l t ag e v gs( th ) i d=- 0.5a t-temperature (c) 0.4 -80 -60 0.6 0 0.2 0.4 0.8 02 4 6 8 10 1.0 6 0 2 4 8 02 4 6 8 10 10 on-resistance vs gate-source voltage v gs -gate source voltage (volts) r ds(on) -drain source resistance ( w ) 11020 1 10 5 transconductance v drain current i d(on) - drain current (amps ) g fs -fo r war d t r a nsc o ndu ctance (ms) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 v ds= 18v 60 40 20 80 160 140 120 100 180 200 v ds= 10v i d= 1a 0.5a 0.25a ZVN3306A 3-376
n-channel enhancement mode vertical dmos fet issue 2 C march 94 features * 60 volt v ds *r dson) =5 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 270 ma pulsed drain current i dm 3a gate-source voltage v gs 20 v power dissipation at t amb =25c p tot 625 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.8 2.4 v id=1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 0.5 50 m a m a v ds =60v, v gs =0 v ds =48v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 750 ma v ds =18v, v gs =10v static drain-source on-state resistance (1) r ds(on) 5 w v gs =10v,i d =500ma forward transconductance(1)(2 ) g fs 150 ms v ds =18v,i d =500ma input capacitance (2) c iss 35 pf common source output capacitance (2) c oss 25 pf v ds =18v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 8pf turn-on delay time (2)(3) t d(on) 5ns v dd ? 18v, i d =500ma rise time (2)(3) t r 7ns turn-off delay time (2)(3) t d(off) 6ns fall time (2)(3) t f 8ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% ( 2) sample test. e-line to92 compatible ZVN3306A 3-375 d g s typical characteristics v ds - drain source voltage (volts) i d(o n ) -on-state drain current (amps) transfer characteristics saturation characteristics v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) i d= 1a 0.5a 0.25a i d( o n ) - on- stat e drain cur r e n t ( am ps) v gs -gate source voltage (volts) 0.6 0 0.2 0.4 0.8 02 4 6 8 10 1.0 v gs= 10v 5v 7v 8v 6v 4v 3v 9v normalised r ds(on) and v gs(th) vs temperature nor m ali s e d r ds(on) a nd v g s(th) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 dr ain -s o u rc e r e s i s tanc e r d s( o n ) g ate t h res h o l d v o l t ag e v gs( th ) i d=- 0.5a t-temperature (c) 0.4 -80 -60 0.6 0 0.2 0.4 0.8 02 4 6 8 10 1.0 6 0 2 4 8 02 4 6 8 10 10 on-resistance vs gate-source voltage v gs -gate source voltage (volts) r ds(on) -drain source resistance ( w ) 11020 1 10 5 transconductance v drain current i d(on) - drain current (amps ) g fs -fo r war d t r a nsc o ndu ctance (ms) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 v ds= 18v 60 40 20 80 160 140 120 100 180 200 v ds= 10v i d= 1a 0.5a 0.25a ZVN3306A 3-376
typical characteristics 0 q-charge (nc) transconductance v gate-source voltage v gs -gate source voltage (volts) v g s -gate source voltage (v olts) gate charge v gate-source voltage 10 8 6 2 0 4 12 14 16 v dd =20v i d= 800ma 30v 50v 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 g fs - t r an sc o nd ucta nce (ms) v ds -drain source voltage (volts) capacitance v drain-source voltage c-capacitance (pf) c oss c iss c rss 0 10 20 30 40 50 0 30 20 10 40 50 0 12345678910 0 v ds= 18v 60 40 20 80 160 140 120 100 180 200 ZVN3306A 3-377
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